| PART |
Description |
Maker |
| 1N4748A 1N4732A 1N4758A 1N4745A 1N4754A 1N4744A 1N |
Silicon Power Z-Diode for Voltage Stabilization(稳定电压22V，稳定电1.5mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定（稳定电2V的，稳定电流一十一点五毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压3.9V，稳定电4mA的硅功率齐纳二极 硅功Z -二极管的电压稳定（稳定电压均.9V，稳定电流六十四毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压16V，稳定电5.5mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定（稳定电6V的稳定电流一十五点五毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压9.1V，稳定电8mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定（稳定电.1V，稳定电8毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压12V，稳定电1mA的硅功率齐纳二极 硅功率Z -二极管的稳定电压12V的稳定电压，稳定电流21毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压75V，稳定电.3mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定（稳定电5V的，稳定电流三点三毫安的硅功率齐纳二极管
Silicon Power Z-Diodes 硅功率Z -二极
Silicon Power Z-Diode for Voltage Stabilization(稳定电压13V，稳定电9mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定（稳定电3V的，稳定电流十九毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压20V，稳定电2.5mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定（稳定电0V的，稳定电流十二点五毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压8.2V，稳定电1mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定（稳定电.2V，稳定电流三一毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压6.2V，稳定电1mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定（稳定电.2V，稳定电1毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压3.6V，稳定电9mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定（稳定电.6V的稳定电9毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压4.7V，稳定电3mA的硅功率齐纳二极
Silicon Power Z-Diode for Voltage Stabilization(稳定电压5.1V，稳定电9mA的硅功率齐纳二极
From old datasheet system
Silicon Power Z?Diodes
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
TFUNK[Vishay Telefunken]
|
| 1N1301 1N2283 1N4526 1N1196A 1N1196 1N2021 1N1192A |
Standard Rectifier (trr more than 500ns)
(1N2xxx) SILICON POWER RECTIFIER
SILICON POWER RECTIFIER 40 A, 200 V, SILICON, RECTIFIER DIODE, DO-203AB
(1N4525 - 1N4529) SILICON POWER RECTIFIER
SILICON POWER RECTIFIER 40 A, 100 V, SILICON, RECTIFIER DIODE, DO-203AB
SILICON POWER RECTIFIER 40 A, 50 V, SILICON, RECTIFIER DIODE, DO-203AB
SILICON POWER RECTIFIER 40 A, 350 V, SILICON, RECTIFIER DIODE, DO-203AB
SILICON POWER RECTIFIER 40 A, 300 V, SILICON, RECTIFIER DIODE, DO-203AB
SILICON POWER RECTIFIER 40 A, 400 V, SILICON, RECTIFIER DIODE, DO-203AB
SILICON POWER RECTIFIER
|
MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
|
| JANTXV1N827ATR-2 JANS1N827ATR-2 JANTXV1N827TR-2 JA |
6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-204AH
6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-213AA
|
Microsemi, Corp.
Microsemi Corporation
|
| 30KP66A 30KP260CA 30KP168CA 30KP168A 30KP72A 30KP6 |
30000 Watts Transient Voltage Suppressor 28 to 288 Volt
30000 W, UNIDIRECTIONAL, SILICON, TVS DIODE ROHS COMPLIANT, PLASTIC, R-6, 2 PIN
30000 W, BIDIRECTIONAL, SILICON, TVS DIODE
|
Micro Commercial Components, Corp.
Micro Commercial Compon...
|
| 1N4150 |
500mW 75 Volt Silicon Epitaxial Diode
|
Micro Commercial Compon...
|
| 1N2282 1N1185A 1N1612 1N3055 1N4510 1N3573R 1N1581 |
35 A, 300 V, SILICON, RECTIFIER DIODE, DO-5
40 A, 150 V, SILICON, RECTIFIER DIODE, DO-5
5 A, 50 V, SILICON, RECTIFIER DIODE, DO-4
0.125 A, SILICON, SIGNAL DIODE
12 A, 1000 V, SILICON, RECTIFIER DIODE, DO-4
3.5 A, 500 V, SILICON, RECTIFIER DIODE, DO-4
3 A, 50 V, SILICON, RECTIFIER DIODE, DO-4
1 A, 400 V, SILICON, SIGNAL DIODE, DO-4
1 A, 200 V, SILICON, SIGNAL DIODE, DO-4
0.8 A, SILICON, SIGNAL DIODE
35 A, 800 V, SILICON, RECTIFIER DIODE, DO-5
275 A, 150 V, SILICON, RECTIFIER DIODE, DO-9
|
|
| SML60EUZ06B |
Enhanced Ultrafast Recovery Diode 600 Volt, 60Amp 60 A, 600 V, SILICON, RECTIFIER DIODE
|
TT electronics Semelab, Ltd.
|
| MMBD914 |
350mW 100 Volt Silicon Epitaxial Diode
|
Micro Commercial Components
|
| UZ7815 UZ7860 UZ7812 UZ7806 UZ7727 UZ7830 UZ7840 U |
30 V, 10 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
Zener Voltage Regulator Diode 20 V, 6 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
POWER ZENERS 14 V, 10 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
POWER ZENERS 56 V, 10 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
200FW series, Shielded 3-wire DC Sinking (NPN), N.C. proximity sensor, 0.625 in cylindrical housing , 20 ga, MIL-W-22759/7 wire. Nominal sensing distance of 2,4 mm to 11,4 mm [.09 in to .45 in] with 101MG7 as the magnetic target
|
MICROSEMI CORP-SCOTTSDALE
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| ISD380-9 ISD25-15 ISDF65-7 ISD320-16 ISDR320-22 IS |
380 A, 900 V, SILICON, RECTIFIER DIODE
25 A, 1500 V, SILICON, RECTIFIER DIODE
65 A, 700 V, SILICON, RECTIFIER DIODE
320 A, 1600 V, SILICON, RECTIFIER DIODE
320 A, 2200 V, SILICON, RECTIFIER DIODE
160 A, 1400 V, SILICON, RECTIFIER DIODE
65 A, 400 V, SILICON, RECTIFIER DIODE
380 A, 1300 V, SILICON, RECTIFIER DIODE
380 A, 1200 V, SILICON, RECTIFIER DIODE
380 A, 1500 V, SILICON, RECTIFIER DIODE
380 A, 600 V, SILICON, RECTIFIER DIODE
380 A, 400 V, SILICON, RECTIFIER DIODE
380 A, 500 V, SILICON, RECTIFIER DIODE
160 A, 900 V, SILICON, RECTIFIER DIODE
160 A, 1000 V, SILICON, RECTIFIER DIODE
160 A, 500 V, SILICON, RECTIFIER DIODE
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|
| 1N3157A 1N3154 1N3154-1 1N3154A 1N3155 1N3155A 1N3 |
8.4 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES
0TC Reference Voltage Zener; Package: DO-7; Power (W): 0.5; ZZT (Ohms): 15; IR (µA): 10; Tol (%): 5; 8.4 V, SILICON, VOLTAGE REFERENCE DIODE, DO-35
Zener Voltage Regulator Diode
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| MSK4351U MSK4351 MSK4351D MSK4351ED MSK4351ES MSK4 |
50 AMP, 500 VOLT IGBT PLUS DIODE FULLY ISOLATED SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID
|
M.S. Kennedy Corporatio...
MSK[M.S. Kennedy Corporation]
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